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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING
3.2+/-0.4
4.8MAX
9+/-0.4
*High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
12.3+/-0.6
FEATURES
2
For output stage of high power amplifiers in HF band mobile radio sets.
12.3MIN
APPLICATION
1.2+/-0.4 0.8+0.10/-0.15
123
0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5
5deg
PIN 1.Gate 2.Source 3.Drain UNIT:mm
9.5MAX
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS UNIT 50 V +/- 20 V 27.8 W 0.3 W 3 A C 150 -40 to +150 C C/W 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.15W, f=30MHz, Idq=0.5A VDD=15.2V,Po=6W(Pin Control) f=30MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.9 6 55 LIMITS TYP MAX. 10 1 4.9 10 65 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD06HHF1
MITSUBISHI ELECTRIC 1/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
50 CHANNEL DISSIPATION Pch(W) 40
20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
30
0
2
4 6 Vgs(V)
8
10
Vds-Ids CHARACTERISTICS 4
Ta=+25C Vgs=10V
Vds VS. Ciss CHARACTERISTICS 60 50 Ciss(pF) 40 30 20 10 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
3 Ids(A)
Vgs=9V
Vgs=8V
2
Vgs=7V
1
Vgs=6V Vgs=5V
0 0 2 4 6 Vds(V) 8 10
Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
RD06HHF1
MITSUBISHI ELECTRIC 2/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
Pin-Po CHARACTERISTICS 100
Po
Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 40 30 20 10
Gp Ta=+25C f=30MHz Vdd=12.5V Idq=0.5A
100
Po
14 12 Pout(W) , Idd(A) 10
d
Po(dBm) , Gp(dB) , Idd(A)
80
90 80 d(%) 70
d(%)
60 40 20 0
8 6 4 2 0 0.0 0.1 Pin(W) 0.2 0.3
Idd Ta=25C f=30MHz Vdd=12.5V Idq=0.5A
60 50 40 30
0 -10 0 10 Pin(dBm) 20
Vdd-Po CHARACTERISTICS 16 14 12 Po(W) 10 8 6 4 2 0 4 6 8 10 Vdd(V) 12 14 0 0
Idd Ta=25C f=30MHz Pin=0.15W Idq=0.5A Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2 4 5 4 Ids(A),GM(S) 3 2 1
Vds=10V Tc=-25~+75C -25C +75C +25C
3
Po
2
1
Idd(A)
0
2
4 6 Vgs(V)
8
10
Vgs-gm CHARACTORISTICS 2.0
Vds=10V Tc=-25~+75C
1.5
gm(S)
1.0
-25C +25C
0.5
+75C
0.0 0 1 2 3 456 Vgs(V) 7 8 9
RD06HHF1
MITSUBISHI ELECTRIC 3/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W TEST CIRCUIT(f=30MHz)
Vgg
Vdd 330uF,50V
L2 8.2KOHM C1 84pF 1KOHM C2 RF-IN 220pF 150/120pF 56pF L3 L4 1OHM C1
C1
220pF
100pF
10uF,50V*3 C1 L1 56pF 30pF
L5
L6
C2
RF-OUT
100pF
200/200pF 100pF
5 16 35 46 65 85 76 91 100
1.5 18 36 42 45 45 67 75 91 100
C1:100pF,0.022uF,0.1uF in parallel C2:470uF*2 in parallel L1:10Turns,I.D8mm,D0.9mm copper wire L2:10Turns,I.D6mm,D1.6mm silver plated copper wire L3:5Turns,I.D5.6mm,D0.9mm copper wire L4:6Turns,I.D5.6mm,D0.9mm copper wire L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm L6:7Turns,I.D5.6mm,D0.9mm copper wire
Dimensions:mm Note:Board material- teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
/
RD06HHF1
MITSUBISHI ELECTRIC 4/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
Zo=50ohm
Silicon MOSFET Power Transistor 30MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=30MHz Zout f=30MHz Zin
Zin , Zout f (MHz) 30 Zin (ohm) 65.06-j150.9 Zout (ohm) 8.75-j4.92 Conditions Po=10W, Vdd=12.5V,Pin=0.15W
RD06HHF1
MITSUBISHI ELECTRIC 5/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8
Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0
RD06HHF1
MITSUBISHI ELECTRIC 6/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD06HHF1
MITSUBISHI ELECTRIC 7/7
REV.5 2 APRIL. 2004

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